Nonvolatile memory device including nonvolatile memory and resistance-time converter, and integrated circuit card including nonvolatile memory device

ABSTRACT

A nonvolatile memory device comprises: a nonvolatile memory; a resistance-time converter that outputs an end signal at timing according to a resistance value of the nonvolatile memory; and a time-digital converter that measures the time from input of a start signal to input of the end signal and converts the measured time into a digital value. The time-digital converter includes: a ring delay circuit that includes delay elements connected in a ring configuration; a counter circuit that counts the number of times of a rising edge or a falling edge in output of one of the delay elements; a first memory circuit that stores, based on the end signal, outputs of the delay elements as first data; and a second memory circuit that stores, based on the end signal, a count value of the counter circuit as second data.

BACKGROUND 1. Technical Field

The present disclosure relates to a variable-resistance nonvolatilememory device.

2. Description of the Related Art

There has been a rapid expansion in the market for electronic commerceservices carried out via the Internet, such as Internet banking andInternet shopping. Electronic money is used as a payment method at suchtime, and there has likewise been an expansion in the use of integratedcircuit (“IC”, hereinafter the same) cards and smartphone terminals thatare used as media therefor. For safety when making payments, theseservices ordinarily require a higher level of security technology formutual authentication during communication and encryption ofcommunication data. Generally, in an IC having enhanced security,confidential information is used in an encrypted manner by using anencryption circuit mounted therein and information leaks are prevented.In this case, it is essential that information regarding an encryptionkey (also referred to as a “secret key”) that is retained internally isnot leaked to the outside.

In order to address these issues, physically unclonable function (PUF)technology has been proposed. PUF technology uses manufacturingvariations to generate unique solid identification information that isdifferent for each IC. Hereinafter, solid identification informationgenerated by means of PUF technology will be referred to as “digital IDdata” in the present specification. Digital ID data can be said to berandom number data that is characteristic to each device and associatedwith variations in the physical characteristics of ICs. These physicalcharacteristics cannot be artificially controlled for each IC, and it istherefore possible to generate data that cannot be physically replicated(for example, see Japanese Patent No. 5689571).

Furthermore, disposable secret keys which use true random numbers thatcannot be predicted are employed when generating encryption keys (forexample, see Japanese Unexamined Patent Application Publication No.2015-212933). A true random number (physical random number) refers to arandom number that is generated by using the physical phenomenon ofintrinsically having random properties, such as the thermal noise withina semiconductor device, for example. In this way, a true random numberis not reproducible and cannot be predicted by anyone, and thereforeencryption that is carried out using a secret key generated using a truerandom number has a high degree of safety.

In Japanese Patent No. 5689571, a method is given in which variation ina resistance value inherent to a nonvolatile memory is used as digitalID data. Furthermore, in Japanese Unexamined Patent ApplicationPublication No. 2015-212933, temporal fluctuation in a resistance valueof a nonvolatile memory is used as a true random number source.

In order to increase the read speed when reading the resistance value ofa nonvolatile memory, it is necessary for capacitance charge to bedischarged quickly, and for a time measurement counter to be operated athigh speed. However, with an IC card, it is necessary for various typesof functions to be executed within a short period of time using powerprovided by a wireless power supply that is obtained duringcommunication, and extremely low power saving and high-speed generationare required at the same time. Power consumption increases when a timemeasurement counter is operated at high speed, and there is apossibility that a wireless power supply will no longer be sufficient.

SUMMARY

In one general aspect, the techniques disclosed here feature anonvolatile memory device provided with: a first nonvolatile memory thatstores information in association with a resistance value thereof; afirst resistance-time converter that outputs a first end signal attiming according to the resistance value of the first nonvolatilememory, the first resistance-time converter being connected to the firstnonvolatile memory; and a time-digital converter that converts a firsttime from input of a start signal to input of the first end signal intoa first digital value. The time-digital converter includes: a ring delaycircuit that includes delay elements connected in a ring configuration;a counter circuit that counts the number of times of a rising edge orthe number of times of a falling edge in output of one of the delayelements; a first memory circuit that stores, based on the first endsignal, outputs of the delay elements as first data; and a second memorycircuit that stores, based on the second end signal, a count value ofthe counter circuit as second data.

Comprehensive and specific aspects of the aforementioned may beimplemented using a system, a method, and a computer program, or may berealized using a combination of a system, a method, and a computerprogram.

Additional benefits and advantages of the disclosed embodiments willbecome apparent from the specification and drawings. The benefits and/oradvantages may be individually obtained by the various embodiments andfeatures of the specification and drawings, which need not all beprovided in order to obtain one or more of such benefits and/oradvantages.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram depicting an example of a basic configurationof a nonvolatile memory device;

FIG. 2 is a block diagram depicting an example of a specificconfiguration of the nonvolatile memory device depicted in FIG. 1;

FIG. 3 is a drawing depicting an example of a timing chart for the casewhere a memory is read by means of a discharging method in thenonvolatile memory device;

FIG. 4 is a drawing depicting an example of a timing chart for the casewhere a memory is read by means of a charging method in the nonvolatilememory device;

FIG. 5 is a block diagram depicting an example of a detailedconfiguration of a nonvolatile memory device according to embodiment 1;

FIG. 6 is a block diagram depicting an example of a detailedconfiguration of a delay element ring and a delay memory according toembodiment 1;

FIG. 7 is a drawing depicting an example of a timing chart depictingoperations of the delay element ring and the delay memory depicted inFIG. 6;

FIG. 8 is a block diagram depicting an example of a detailedconfiguration of a counter and a counter memory according to embodiment1;

FIG. 9 is a drawing depicting an example of a timing chart depictingoperations of the counter and the counter memory according to embodiment1;

FIG. 10 is a drawing depicting an example of a timing chart depictingoperations of the delay element ring, the delay memory, the counter, andthe counter memory according to embodiment 1;

FIG. 11 is a block diagram depicting an example of a counter memoryfetch signal generation circuit according to embodiment 2;

FIG. 12 is a drawing depicting an example of a timing chart depictingoperations of the counter memory fetch signal generation circuit in thecase where there is a delay in a delay element ring and a counteraccording to embodiment 2;

FIG. 13 is a block diagram depicting an example of a time-digitalconverter that includes the counter memory fetch signal generationcircuit, a sampling memory, and a correction circuit according toembodiment 2;

FIG. 14 is a flowchart depicting a specific example of a processing flowin which the correction circuit corrects a count value according toembodiment 2;

FIG. 15 is a first timing chart for the case where the correctioncircuit does not correct the count value according to embodiment 2;

FIG. 16 is a second timing chart for the case where the correctioncircuit does not correct the count value according to embodiment 2;

FIG. 17 is a timing chart for the case where the correction circuitcorrects the count value according to embodiment 2;

FIG. 18 is a third timing chart for the case where the correctioncircuit does not correct the count value according to embodiment 2;

FIG. 19 is a block diagram depicting an example of a configuration inwhich both the time of a time measurement start time and the time of atime measurement end time of a time-digital converter are saved and thedifference is output according to embodiment 3;

FIG. 20 is a circuit diagram depicting an example of a configuration inwhich a current amount of a delay element ring can be changed accordingto embodiment 4;

FIG. 21 is a circuit diagram depicting an example of a configuration inwhich a voltage amount of the delay element ring can be changedaccording to embodiment 4;

FIG. 22 is a block diagram depicting an example of a configuration inwhich the current amount of the delay element ring is adjusted accordingto embodiment 4;

FIG. 23 is a timing chart for the case where the current amount of thedelay element ring is adjusted according to embodiment 4;

FIG. 24 is a block diagram depicting a time-digital converter accordingto a modified example of embodiment 1;

FIG. 25 is a block diagram depicting a time-digital converter accordingto a modified example of embodiment 2; and

FIG. 26 is a block diagram depicting a time-digital converter accordingto a modified example of embodiment 3.

DETAILED DESCRIPTION Findings Forming the Basis for the PresentDisclosure

In Japanese Patent No. 5689571 and Japanese Unexamined PatentApplication Publication No. 2015-212933, in a circuit that reads aresistance value of a nonvolatile memory, charge that has been chargedin a capacitor up to a fixed voltage is discharged in a resistance ofthe nonvolatile memory, and the time taken for the charge to fall belowa threshold voltage value is measured. In this method, the resistancevalue is extended as a time so to speak, and an accurate resistancevalue can be calculated.

A circuit that counts using a clock signal source is adopted as a methodfor measuring said time. It is also possible to adjust the dischargingtime by adjusting the capacitance of the capacitor. If the capacitanceof the capacitor increases, the discharging time also increases, andtherefore the count value increases. Furthermore, if the capacitance ofthe capacitor decreases, the discharging time decreases, and the countvalue decreases. The count interval is decided by the clock signalsource, and therefore the operating frequency thereof becomes theresolution of a resistance count value. As the capacitance value of thecapacitor increases, the discharging time increases, and the resolutionof resistance value information with respect to the count valueimproves. Conversely, as the capacitance value of the capacitordecreases, the discharging time decreases; however, the resolution ofthe resistance value information with respect to the count valuedeclines.

Furthermore, Japanese Unexamined Patent Application Publication No.2015-212933 presents a method for generating a true random number withtemporal fluctuation in the resistance value of a nonvolatile memorybeing used as a random property. For the method for reading theresistance value, similar to the case in the aforementioned JapanesePatent No. 5689571, a method is used where the time taken for the chargeof a capacitor to be discharged is measured. However, temporalfluctuation in the resistance value of a nonvolatile memory is smallerthan variation in a characteristic resistance value, and therefore, withthe technology given in Japanese Unexamined Patent ApplicationPublication No. 2015-212933, a higher resolution is required than in thecase given in Japanese Patent No. 5689571.

In order to increase the read speed when reading the resistance value ofa nonvolatile memory, it is necessary for capacitance charge to bedischarged quickly, and for a time measurement counter to be operated athigh speed. Mobile electronic money such as the aforementioned IC cardis a card that has a semiconductor integrated circuit (IC) chip mountedthereon, and it is desirable for internal digital ID data to be read anda true random number to be generated and applied to a secret key alsowithin the IC card. However, with an IC card, it is necessary forvarious types of functions to be executed within a short period of timeusing power provided by a wireless power supply obtained duringcommunication, and extremely low power saving and high-speed generationof a true random number are required at the same time. Power consumptionincreases when a time measurement counter is operated at high speed, andthere is a possibility that a wireless power supply will no longer besufficient.

Furthermore, it is necessary to increase the key length in order toimprove security. However, if the key length is increased, the amount ofdigital ID data and the amount of random number data increases, and thetime for reading the resistance value and generating a random numberincreases. Furthermore, if mutual authentication and the encryption ofcommunication data take time, there is a resulting deterioration inusability, and it is therefore necessary for encryption to be carriedout at high speed. However, when encryption is carried out at highspeed, a problem occurs in that current consumption increases.

In a nonvolatile memory device according to an aspect of the presentdisclosure described hereinafter, it is possible to suppress an increasein current consumption while also improving the digital ID data readspeed and the random number generation speed. Furthermore, errors do notoccur in acquired resistance value data. Thus, it is possible fordigital ID data having excellent security to be generated at high speedand with low power consumption.

A nonvolatile memory device according to an aspect of the presentdisclosure is provided with: a nonvolatile memory that stores data bydetermining a resistance value with at least one threshold value; afirst conversion circuit that converts the resistance value stored inthe nonvolatile memory into time information; and a second conversioncircuit that converts the time information into a digital value, inwhich the second conversion circuit is provided with: a ring delaycircuit in which a plurality of delay elements are connected; a countercircuit that measures the number of times that a rising edge or afalling edge occurs in data that is output from any delay element fromamong the plurality of delay elements; a first memory circuit that savesdata that is output from each of the plurality of delay elements; and asecond memory circuit that saves data retained in the counter circuit,and the second conversion circuit, on the basis of a time differencefrom the time at which a time measurement start signal is input to thetime at which a time measurement end signal is input, refers to the datasaved in the first memory circuit and the data saved in the secondmemory circuit, and acquires resistance value information relating tothe resistance value of the nonvolatile memory.

Thus, it is possible for digital ID data having excellent security to begenerated at high speed and with low power consumption.

Furthermore, the ring delay circuit may be provided with an inversioncircuit that inverts the output of any of the connected plurality ofdelay elements, and the output of any of the plurality of delay elementsinverted by the inversion circuit may be connected to the input of thefirst-stage delay element from among the plurality of delay elements.

In addition, there may be provided: a counter memory fetch signalgeneration circuit that, after data retained in the counter circuit haschanged due to a rising edge or a falling edge of the data that isoutput from any delay element from among the plurality of delayelements, generates an edge that is the inverse of the rising edge orthe falling edge of the data that is output from any delay element fromamong the plurality of delay elements, or delays the rising edge or thefalling edge of the data that is output by any delay element from amongthe plurality of delay elements; a third counter memory circuit thatsaves the data retained in the counter circuit on the basis of the timemeasurement end signal; and a correction circuit that refers to the datasaved in the first memory circuit, the data saved in the second memorycircuit, and the data saved in the third memory circuit, and correctsthe data saved in the third memory circuit on the basis of predetermineddetermination criteria.

Furthermore, the first memory circuit may save data that is output fromeach of the plurality of delay elements in accordance with the timemeasurement start signal, and output the saved data in accordance withthe time measurement end signal, the second memory circuit and the thirdmemory circuit may output the data saved in each of the second memorycircuit and the third memory circuit in accordance with the timemeasurement end signal, and the correction circuit may, on the basis ofthe data that is output from the first memory circuit, the second memorycircuit, and the third memory circuit, calculate the time from the timemeasurement start signal being input to the time measurement end signalbeing input.

Furthermore, the ring delay circuit may be provided with: a changecircuit that changes the voltage or current applied to the delayelements, to at least any of a power source side and a ground side ofthe delay elements; and an adjustment circuit for changing delay timesof the delay elements.

Furthermore, the time measurement start signal and the time measurementend signal may be generated in accordance with a reference signal thatis input from outside, and the adjustment circuit may change the delaytimes of the delay elements in such a way that the time difference fromthe time at which the time measurement start signal is input to the timeat which the time measurement end signal is input becomes apredetermined target value.

Furthermore, an integrated circuit card according to an aspect of thepresent disclosure is provided with a nonvolatile memory device havingthe aforementioned features.

First, to aid understanding of the nonvolatile memory device and thelike according to the present disclosure, the basic configuration of thenonvolatile memory device will be described.

FIG. 1 is a block diagram depicting an example of a basic configurationof a variable-resistance nonvolatile memory device 100.

As depicted in FIG. 1, the nonvolatile memory device 100 is configuredof a variable-resistance nonvolatile memory cell (hereinafter, simplyreferred to as a “nonvolatile memory”) 101 and a reading device 102. Thereading device 102 is configured of a resistance-time converter 103 anda time-digital converter 104. The nonvolatile memory device 100 has atleast one variable-resistance nonvolatile memory 101. The nonvolatilememory 101 stores data by determining a resistance value with at leastone threshold value.

The nonvolatile memory 101 is connected to the resistance-time converter103, and when a time measurement start signal is input to theresistance-time converter 103, a resistance value of avariable-resistance element 210 provided in the nonvolatile memory 101is converted into time information and a time measurement end signal isoutput. The time-digital converter 104 counts the time between the timemeasurement start signal and the time measurement end signal, andoutputs this as time data. That is, the resistance value of thevariable-resistance element 210 provided in the nonvolatile memory 101is output as time data, and therefore, if the value of the time data isconfirmed, the resistance value of the variable-resistance element 210provided in the nonvolatile memory 101 is consequently understood.

FIG. 2 is an example of a specific configuration of the nonvolatilememory device 100 depicted in FIG. 1. The reading device 102 has adischarging-type resistance-time converter 103. The resistance-timeconverter 103 is provided with a comparator 202, a load PMOS transistor203, a precharge PMOS transistor 204, a clamp circuit 206 configured ofa clamp NMOS transistor 205, and a charging capacitor 201.

The time-digital converter 104 is configured of a time measurementcounter 207 and a VCO 208. The output of the comparator 202 is connectedto the time measurement counter 207. The time measurement counter 207starts counting by means of a clock signal CLK after a count valuewithin the time measurement counter is initialized by RST becominglow-level.

The clock signal CLK is a signal that is output from the VCO 208, and isa signal that becomes a reference for when a discharging time thatchanges depending on the resistance value of the variable-resistanceelement 210 is converted into a count value. The clock signal CLK is asquare wave that maintains a fixed frequency, for example. Each time theclock signal CLK rises, 1 is added to the count value of the timemeasurement counter 207, the counting up of the time measurement counter207 stops when a node SEN falls below a VREF, and the count value atsuch time is maintained at COUNT_OUT. At such time, a threshold value isinput to the VREF.

In the precharge PMOS transistor 204, a precharge control signal PRE isinput to the gate terminal, a VDD is input to the source terminal, andthe node SEN is connected to the drain terminal.

In the load PMOS transistor 203, a load control signal LOAD is input tothe gate terminal, the VDD is input to the source terminal, and the nodeSEN is connected to the drain terminal.

In the clamp NMOS transistor 205, a clamp control signal CLMP is inputto the gate terminal, and the node SEN is connected to either one of thesource terminal or the drain terminal with a memory cell selected by wayof a column decoder circuit being connected to the other. It should benoted that the column decoder circuit is omitted in FIG. 2.

Here, an operation in which the reading device 102 outputs the countvalue (an example of the resistance count value) will be specificallydescribed using FIGS. 2, 3, and 4. FIG. 3 is an example of a timingchart for the case where a memory is read by means of a dischargingmethod in the nonvolatile memory device 100. FIG. 4 is an example of atiming chart for the case where a memory is read by means of a chargingmethod in the nonvolatile memory device 100.

FIG. 3 is a timing chart for the case where a memory stored in theselected memory cell is read by means of a discharging method.

In the precharge period of T1, the control signal PRE becomes low-level,and the precharge PMOS transistor 204 enters an on state. Meanwhile, thecontrol signal LOAD becomes high-level, and the load PMOS transistor 203enters an off state. The potential of a selection word line WLs islow-level and a transistor 209 is in an off state.

Here, a VCLMP voltage is applied to the gate terminal of the clamp NMOStransistor 205 of the clamp circuit 206, and therefore the potential ofa selection bit line BLs is precharged to a potential obtained bysubtracting VT (threshold value for the clamp NMOS transistor 205) fromVCLMP. Furthermore, a selection source line SLs is fixed to GND. Thenode SEN is precharged up to the VDD. Furthermore, the control signalRST for the time measurement counter connected to the output of thecomparator becomes high-level. A fixed value of 0 is thereby output forthe time measurement counter output terminal COUNT_OUT.

In the sensing period of T2, the control signal PRE is made high-level.Thus, the precharge PMOS transistor 204 enters an off state, and thecontrol signal LOAD becomes low-level. Thus, the load PMOS transistor203 enters an on state. Furthermore, the potential of the selection wordline WLs is made high-level. Thus, the NMOS transistor 209 enters an onstate.

A voltage is then applied from the selection bit line BLs to theselection source line SLs by way of the selected variable-resistanceelement 210. In other words, discharging is started. At the same time asthe start of discharging, the RST of the time-digital converter 104becomes low-level, and counting is started. Then, at each single count,the potential of the node SEN and the voltage of the reference voltageVREF are compared by the comparator 202, and the count value continuesto be added until the node SEN falls below the reference voltage VREF.As the resistance value of the variable-resistance element 210 duringreading increases, the discharging time increases and the count valueincreases.

Furthermore, it is possible to also adjust the discharging time byadjusting the capacitance of the charging capacitor 201. If thecapacitance of the charging capacitor 201 increases, the dischargingtime of the node SEN also increases and the count value consequentlyincreases, and if the capacitance decreases, the discharging time of thenode SEN decreases and the count value decreases.

Using the charging capacitor 201 is effective when there is a desire toimprove detection accuracy for a low resistance level at which thedischarging time is fast, for example. The count interval is decided bythe clock signal CLK, and therefore the operating frequency of the clocksignal CLK serves as the resolution of the count value when theresistance value of the variable-resistance element 210 is converted asa time. However, in the case of a low resistance value, there is apossibility that the discharging time exceeds the resolution of thecount value, in other words, that the discharging time is shorter thanthe time taken for a single count value, and may therefore becomeindistinguishable. Thus, by adding a capacitance load to the node SENand causing a delay, it becomes possible to deliberately implement anadjustment to achieve discharge characteristics of a level at whichdetection is possible at the resolution of the count value.

However, in principle, in the case of the discharging method, as theresistance increases, the discharging time increases and accordingly thedischarge amount with respect to time changes gradually, and thereforethe resolution of the resistance value information with respect to thecount value improves. That is, in the case of the discharging method,highly accurate information can be obtained for a resistance value onthe high resistance side of the variable-resistance element 210.

In the latch period of T3, after discharging has started, the countvalue of the time-digital converter 104 when the node SEN has fallenbelow the reference voltage VREF is latched. The latched count value isoutput to the COUNT_OUT.

In the reset period of T4, when data output has been completed, thepotential of the selection word line WLs is made low-level, thetransistor 209 of the nonvolatile memory 101 selected turns off, and theread operation ends.

FIG. 4 is a timing chart for the case where a memory stored in theselected memory cell is read by means of a charging method.

In the discharge period of T1, the control signal PRE becomes high-leveltogether with the LOAD, and both the precharge PMOS transistor 204 andthe load PMOS transistor 203 enter an off state. Furthermore, thepotential of the selection word line WLs is low-level and the transistor209 is also in an off state.

Here, as a result of the VCLMP voltage being applied to the gateterminal of the clamp NMOS transistor 205 of the clamp circuit, and thepotential of the selection word line WLs being made high-level, the NMOStransistor 209 enters an on state. Thus, the node SEN and the selectionbit line BLs are connected to GND by way of the variable-resistanceelement 210, and are discharged to a GND level. Furthermore, the controlsignal RST for the time measurement counter connected to the output ofthe comparator becomes high-level. A fixed value of 0 is thereby outputfor the time measurement counter output terminal COUNT_OUT.

In the sensing period of T2, the control signal LOAD becomes low-level,and the load PMOS transistor 203 therefore enters an on state. Thus, acurrent path of the load PMOS transistor 203, the clamp NMOS transistor205, and the selected nonvolatile memory 101 is formed, and charging isstarted to the node SEN and the selection bit line BLs. At the same timeas charging is started, the control signal RST of the time-digitalconverter 104 becomes low-level, and counting is started. Then, at eachsingle count, the potential of the node SEN and the voltage of thereference voltage VREF are compared by the comparator 202, and the countvalue continues to be added until the node SEN exceeds the referencevoltage VREF. As the resistance value of the variable-resistance element210 during reading decreases, the charging time increases and the countvalue increases.

Furthermore, using the charging capacitor 201, it is possible to adjustthe charging time in the charging method in the same manner as whenadjusting the discharging time in the discharging method. A detailedexplanation thereof is the same as the explanation for the dischargingmethod, and is therefore omitted.

In principle, in the case of the charging method, as the resistancedecreases, the charging time increases and accordingly the charge amountwith respect to time changes gradually, and therefore the resolution ofthe resistance value information with respect to the count valueimproves. That is, in the case of the charging method, highly accurateinformation can be obtained for a resistance value on the low resistanceside of the variable-resistance element 210.

In the latch period of T3, after charging has started, the count valueof the time-digital converter 104 when the node SEN has exceeded thereference voltage VREF is held. The held count value is output to theCOUNT_OUT, and is treated as a count value that expresses the resistancevalue information of the variable-resistance element 210.

In the reset period of T4, when data output has been completed, thepotential of the selection word line WLs is made low-level, thetransistor 209 of the nonvolatile memory 101 selected turns off, and theread operation ends.

In this way, the resolution with respect to the resistance valueinformation differs depending on the reading method, and therefore, inthe case where there is a desire to obtain resistance value informationin a highly accurate manner, it is desirable to use the dischargingmethod when digital ID data is saved using a high resistance valuerange, and, conversely, it is desirable to use the charging method whendigital ID data is saved using a low resistance value range.

However, meanwhile, the counter range of the time-digital converter 104depicted in FIG. 2 is a finite amount due to hardware constraints. Thatis, when the discharging time or charging time such as theaforementioned is too long, the range of the counter is exceeded, andthere is a problem in that accurate resistance value information is notobtained.

Therefore, in the case where a reduction in circuit scale is to beachieved with the necessary counter bit width being reduced, it isdesirable for the discharging method to be used when digital ID data issaved using a low resistance value range, and, conversely, it isdesirable for the charging method to be used when digital ID data issaved using a high resistance value range.

Embodiment 1

Hereinafter, a nonvolatile memory device according to embodiment 1 willbe described using FIGS. 5 to 10.

To begin, a configuration of the nonvolatile memory device according tothe present embodiment will be described. FIG. 5 is a block diagramdepicting a configuration of the nonvolatile memory device according tothe present embodiment. FIG. 6 is a block diagram depicting an exampleof a detailed configuration of a delay element ring 501 and a delaymemory 503 according to the present embodiment.

As depicted in FIG. 5, a nonvolatile memory device 100 a according tothe present embodiment is provided with the variable-resistancenonvolatile memory 101 and a reading device 102 a.

The reading device 102 a has the resistance-time converter 103 and atime-digital converter 104 a. The variable-resistance nonvolatile memory101 and the resistance-time converter 103 have the same configurationsas those of the variable-resistance nonvolatile memory 101 andresistance-time converter 103 depicted in FIG. 2. Furthermore, thetime-digital converter 104 a has a different internal configuration fromthat of the time-digital converter 104 depicted in FIG. 2.

The time-digital converter 104 a is configured of: the delay elementring 501; the delay memory 503, which saves the phase state (retaineddata, specifically A to H described in detail later on) of the delayelement ring 501; a counter 502; a counter memory 504 that records thestate (retained data, specifically a count value) of the counter 502;and a decoder 505 that decodes output of the delay memory 503 and thecounter memory 504. Here, the phase state of the delay element ring 501refers to data retained by the delay element ring 501, specificallyoutput data A to H described in detail later on. Furthermore, the stateof the counter 502 refers to data retained by the counter 502,specifically a count value described in detail later on.

As depicted in FIG. 6, the delay element ring 501 is configured of delayelements 602 in which the input and output have the same logic,represented by buffers or the like, and a NAND element 601, for example.In the delay element ring 501, the plurality of delay elements 602 arelinked in series, and any of the delay elements from among saidplurality of delay elements 602 is connected to the NAND element 601that constitutes input. For example, the final-stage delay element 602is connected to the input NAND element 601 that constitutes input. Itshould be noted that FIG. 6 depicts the delay element ring 501 havingthe delay elements 602 linked in four stages as an example. Furthermore,the output data corresponding to each delay element 602 is also referredto as bits. It should be noted that the output data corresponding to thecounter 502 described later on is also referred to as bits.

Furthermore, the delay memory 503 is configured of a plurality of delayflip-flops 603 linked in series. FIG. 6 depicts the delay memory 503having the delay flip-flops 603 linked in four stages as an example. Thedelay flip-flops 603 are respectively connected to the outputs of thefour-stage delay elements 602.

It should be noted that the resistance-time converter 103 and thetime-digital converter 104 a are respectively examples of a firstconversion circuit and a second conversion circuit in the presentdisclosure. Furthermore, the delay element ring 501 is an example of aring delay circuit in the present disclosure. The counter 502 is anexample of a counter circuit in the present disclosure. The delay memory503 and the counter memory 504 are respectively examples of a firstmemory circuit and a second memory circuit in the present disclosure.Furthermore, the NAND element 601 is an example of an inversion circuitin the present disclosure.

Next, operations of the nonvolatile memory device 100 a in the presentembodiment will be described. FIG. 7 is a timing chart depictingoperations of the delay element ring 501 and the delay memory 503depicted in FIG. 6.

It should be noted that, hereinafter, a “rising edge” refers to aboundary where an output signal changes from low to high, in otherwords, a boundary where output data changes from 0 to 1. Furthermore, a“falling edge” refers to a boundary where an output signal changes fromhigh to low, in other words, a boundary where output data changes from 1to 0.

As depicted in FIG. 7, when a time measurement start signal is input inthe delay element ring 501, falling edges are transmitted in the orderof from the first-stage delay element 602 to the second, third, andfourth-stage delay elements 602. If the data that is output from each ofthe delay elements 602 from the first stage to fourth stage is taken asD0, D1, D2, and D3, the data that is output from each of the delayelements 602 in the intervals of T1→T2→T3→T4→T5 depicted in FIG. 7changes in the order of (D0, D1, D2, D3)=(1, 1, 1, 1)→(0, 1, 1, 1)→(0,0, 1, 1)→(0, 0, 0, 1)→(0, 0, 0, 0). The falling edge transmitted to thefourth-stage delay element 602 is transmitted to the NAND element 601 ofthe delay element ring 501, and is converted into a rising edge at theNAND.

Following on, rising edges are transmitted from the first-stage delayelement 602 to the second, third, and fourth-stage delay elements 602,and the data that is output from each of the delay elements 602 in theintervals of T5→T6→T7→T8→T9 changes in the order of (D0, D1, D2, D3)=(0,0, 0, 0)→(1, 0, 0, 0)→(1, 1, 0, 0)→(1, 1, 1, 0)→(1, 1, 1, 1). The risingedge transmitted to the fourth-stage delay element 602 is transmitted tothe NAND element 601 of the delay element ring 501, and is convertedinto a falling edge at the NAND. Hereinafter, the same operation as thatwhich is first carried out is repeated.

As mentioned above, the output data (DO, D1, D2, D3) of the delayelements 602 expressed by four bits does not result in a simple increaseof a binary number. Thus, if it is assumed that (1, 1, 1, 1)=A, (0, 1,1, 1)=B, (0, 0, 1, 1)=C, (0, 0, 0, 1)=D, (0, 0, 0, 0)=E, (1, 0, 0, 0)=F,(1, 1, 0, 0)=G, and (1, 1, 1, 0)=H, the delay element ring 501 performsthe operation of a three-bit counter that repeats the output of eighttypes of data from A to H.

As mentioned above, in the delay element ring 501, when the timemeasurement start signal is input, rising edges and falling edges arealternately transmitted in the order of from the first-stage delayelement 602 to the second, third, and fourth-stage delay elements 602. Adelay flip-flop 603 is connected to the output side of each of the delayelements 602. When a time measurement end signal is input to the delaymemory 503, output data (1 or 0) from the delay elements 602 is saved inthe delay flip-flops 603. By referring to the output data saved in thedelay memory 503, it is possible to determine the time from the timemeasurement start signal being input to the time measurement end signalbeing input. For example, in the case where the delay amount per onedelay element 602 is 100 picoseconds and (D0, D1, D2, D3)=(0, 0, 0, 1),it is understood that the time from the time measurement start signalbeing input to the time measurement end signal being input is 300picoseconds.

However, until the time measurement end signal is input to the delaymemory 503, the rising edges and falling edges continue within the delayelement ring 501 in an alternating manner indefinitely. Consequently, itis difficult to determine how many times a rising edge and a fallingedge has occurred up to the time measurement end signal being input tothe delay memory 503. Thus, as depicted in FIG. 5, the output of thefinal-stage delay element 602 of the delay element ring 501 is connectedto the input of the counter 502 as a count-up signal.

FIG. 8 is a block diagram depicting an example of a detailedconfiguration of the counter 502 and the counter memory 504 according tothe present embodiment. FIG. 9 is an example of a timing chart depictingoperations of the counter 502 and the counter memory 504 according tothe present embodiment.

The counter 502 is configured of a plurality of flip-flops 803 linked inseries. FIG. 8 depicts the counter 502 having the flip-flops 803 linkedin four stages as an example.

The counter memory 504 is configured of a plurality of counterflip-flops 802 linked in series. FIG. 8 depicts the counter memory 504having the counter flip-flops 802 linked in four stages as an example.The counter flip-flops 802 are respectively connected to the outputs ofthe four-stage flip-flops 803.

For the counter 502, a synchronous counter may be used rather than theasynchronous counter depicted in FIG. 8. The counter 502 adds 1 to acount value each time a count-up signal is input. That is, 1 is added tothe count value each time the output D3 of the final-stage delay element602 of the delay element ring 501 changes from low to high.

Specifically, the outputs (C0, C1, C2, C3) of the flip-flops 803increase by 1 at a time as in (0, 0, 0, 0), (1, 0, 0, 0), (0, 1, 0, 0),and (1, 1, 0, 0). The outputs of the flip-flops 803 are connected to thecounter memory 504. When a time measurement end signal is input to thecounter flip-flops 802, count values are stored in the counterflip-flops 802. By referring to the count values stored in the countermemory 504, the delay element ring 501 can determine how many times arising edge or falling edge has occurred in the delay element ring 501.

In addition, the aforementioned values acquired by the delay memory 503and the count values acquired by the counter memory 504 are decoded bythe decoder 505 and summed up, and it is thereby possible to determinehow many stages of delay elements are equivalent to the time that haselapsed. If the delay amount per one delay buffer stage is severalpicoseconds to several nanoseconds, and a conventional method in whichtime is measured by a counter is adopted, a resolution is consequentlyobtained that is the same as that obtained when a counter is operatingat several hundred megahertz to several hundred gigahertz.

For example, in the case where the delay element ring 501 and delaymemory 503 depicted in FIG. 6 and the counter 502 and counter memory 504depicted in FIG. 8 are combined, when the delay elements 602 in thedelay element ring 501 constitute four stages and the flip-flops 803 inthe counter 502 are configured of four bits, consequently the delaybuffers can constitute eight stages and the counter can perform 16counts, and measurement can be performed with 8×16=128 stages in total.

FIG. 10 is an example of a timing chart depicting operations of thedelay element ring 501, the delay memory 503, the counter 502, and thecounter memory 504 according to the present embodiment.

When the time measurement end signal is input, the output of the delayelement ring 501 is stored in the delay memory 503, and the output ofthe counter 502 is stored in the counter memory 504. For example, in thecase where the time measurement end signal is input at the timing oftime TA indicated in the timing chart depicted in FIG. 10, D is storedin the delay memory 503, and 9 is stored in the counter memory 504 as adecimal number. D that is output from the delay memory 503 correspondsto three of the delay elements 602.

In addition, the decoder 505 calculates and outputs how many of thedelay elements 602 are equivalent to the delay time, namely the timefrom the time measurement start to the time measurement end, on thebasis of the output of the delay memory 503 and the output of thecounter memory 504. In the case where the delay element ring 501 anddelay memory 503 depicted in FIG. 6 and the counter 502 and countermemory 504 depicted in FIG. 8 are combined, a count value of 1 of thecounter 502 corresponds to eight of the delay elements 602, andtherefore there are 3+8×9=75 stages when expressing the number of stagesof all of the delay elements 602. In addition, when the processing timeof the delay elements 602 is taken as having been 100 picoseconds perone stage, it is understood that the time from the time measurementstart to the time measurement end was 7.5 nanoseconds. From a timeobtained in this manner, it is possible to acquire the resistance value(resistance value information) of the variable-resistance element 210provided in the nonvolatile memory 101.

The delay element ring in FIG. 6 is configured of the NAND element 601,the delay elements 602, and the delay flip-flops 603; however, it shouldbe noted that an AND element may be used instead of the NAND element601.

Furthermore, the delay element ring may be configured of only the delayelements 602 and the delay flip-flops 603 without using the NAND element601. In these cases, a mechanism with which the outputs of the delayelements 602 are returned to the original state may be newly provided.

Hereinabove, according to a nonvolatile memory device according to anaspect of the present disclosure, the time-digital converter 104 isconfigured using the delay element ring 501, the counter 502, the delaymemory 503, the counter memory 504, and the decoder 505, and it isthereby possible to obtain a high temporal resolution without increasingthe counter operating speed. Since the counter operating speed is notincreased, it is possible to suppress an increase in power consumption.

FIG. 24 depicts a time-digital converter 104 d according to a modifiedexample of embodiment 1.

The time-digital converter 104 d includes the delay element ring 501,the counter 502, delay memories 503 a and 503 b, counter memories 504 aand 504 b, and decoders 505 a and 505 b. The delay memory 503 a, thecounter memory 504 a, and the decoder 505 a constitute a first channel,and the delay memory 503 b, the counter memory 504 b, and the decoder505 b constitute a second channel.

The configurations of the delay memories 503 a and 503 b are the same asthat of the aforementioned delay memory 503, for example. Theconfigurations of the counter memories 504 a and 504 b are the same asthat of the aforementioned counter memory 504, for example. Theconfigurations of the decoders 505 a and 505 b is the same as that ofthe aforementioned decoder 505, for example.

The operations in the channels of the time-digital converter 104 d arethe same as those described above as the operations of the delay memory503, the counter memory 504, and the decoder 505, for example.

The time-digital converter 104 d, for example, receives a timemeasurement start signal from outside, receives a first time measurementend signal from a first resistance-time converter (not depicted), andreceives a second time measurement end signal from a secondresistance-time converter (not depicted). Each of these resistance-timeconverters has the same configuration as that of the aforementionedresistance-time converter 103, for example. A resistance value of afirst nonvolatile memory (not depicted), for example, is reflected inthe first time measurement end signal, and a resistance value of asecond nonvolatile memory (not depicted), for example, is reflected inthe second time measurement end signal.

The first channel outputs information regarding the time from the timemeasurement start time to the first time measurement end time as firstdecoder output. The second channel outputs information regarding thetime from the time measurement start time to the second time measurementend time as second decoder output. The time-digital converter 104 d isthereby able to output a plurality of items of time information inparallel on the basis of different time measurement end signals.Therefore, for example, a reading device that includes the time-digitalconverter 104 d and a plurality of resistance-time converters is able toacquire information regarding the resistance values of a plurality ofnonvolatile memories in parallel.

It should be noted that the time-digital converter 104 d may be providedwith three or more channels. The time-digital converter 104 d wouldthereby able to acquire three or more items of time information. In thetime-digital converter 104 d, a decoder does not have to be provided foreach channel, and a decoder may be shared by a plurality of channels. Inthis case, for example, the decoder selectively acquires one set ofdelay memory output and counter memory output from a plurality ofchannels, and generates one item of decoder output on the basis thereof.Thus, a plurality of items of decoder output can be output from onedecoder.

Based on the above, with the nonvolatile memory device 100 a accordingto the present embodiment, it is possible for digital ID data havingexcellent security to be generated at high speed and with low powerconsumption.

Embodiment 2

Next, a nonvolatile memory device according to the present embodimentwill be described using FIGS. 11 to 18. FIG. 11 is a block diagramdepicting an example of a counter memory fetch signal generation circuitaccording to the present embodiment. FIG. 12 is an example of a timingchart depicting operations of the counter memory fetch signal generationcircuit in the case where there is a delay in a delay element ring and acounter according to the present embodiment. FIG. 13 is a block diagramdepicting an example of a time-digital converter that includes thecounter memory fetch signal generation circuit, a sampling memory, and acorrection circuit according to the present embodiment. FIG. 14 is aflowchart depicting a specific example of a processing flow in which thecorrection circuit corrects a count value according to the presentembodiment.

In practice, when there is an operation delay in the delay elements 602,there are cases where the nonvolatile memory device 100 a does notoperate as envisaged. In particular, in the case of the asynchronouscounter 502 such as that depicted in FIG. 8, the extent to which thecircuit delay effect of the flip-flops 803 accumulates increases withhigher-order bits (output from the later stages from among the pluralityof flip-flops 803), and the bits do not change at the same time. If thecounter 502 were configured of a synchronous counter, the delay of theflip-flops 803 would not accumulate, however, variations produced duringmanufacture, parasitic resistance, parasitic capacitance, and the likewould accompany the output elements of each bit, and the bits would notchange at the same time.

For example, as depicted in FIG. 12 described later on, the bit outputsC1, C2, C3, and C4 of the counter 502 do not operate at the same timingas a count-up signal, and are output delayed with respect to thecount-up signal. At the timing of time TB, the change of each bit of thecounter 502 has completed, and therefore a normal value is acquired bythe counter memory 504 even if a time measurement end signal is input.However, when a time measurement end signal is input at the timing oftime TC, the change (for example, bit output C1) of each bit of thecounter 502 has not completed, and therefore an erroneous value is savedin the counter memory 504.

Furthermore, deviation in the operation timings of the delay elementring 501 and the counter 502 become a problem. For example, as depictedin FIG. 12, the count-up signal rises at the timing when the output fromthe delay element ring 501 switches from 7 to 0, and 1 is added to thevalue of the counter 502. However, in practice, C0, which is the 0^(th)bit of the counter 502, changes after the elapse of the delay time ofthe time TD from the rise of the count-up signal. This causes anerroneous value to be input to the counter memory 504 even if a timemeasurement end signal is input in the period of time TD.

In order to prevent this kind of problem, in the nonvolatile memorydevice according to the present embodiment, a counter memory fetchsignal generation circuit (in FIG. 11, simply depicted as a “signalgeneration circuit”) 1101 such as that depicted in FIG. 11 is provided.

The counter memory fetch signal generation circuit 1101 is a circuitthat delays the time measurement end signal. In detail, after dataretained in the counter circuit has changed due to a rising edge or afalling edge of data that is output from any of the plurality of delayelements 602, the counter memory fetch signal generation circuit 1101generates an edge that is the inverse of the rising edge or the fallingedge of the data that is output from any of the plurality of delayelements 602. Alternatively, the counter memory fetch signal generationcircuit 1101 delays the rising edge or the falling edge that is outputfrom any of the plurality of delay elements 602.

As depicted in FIG. 11, the counter memory fetch signal generationcircuit 1101 is configured of an inversion element 1102 and a flip-flopcircuit 1103. The counter memory fetch signal generation circuit 1101,when installed in a time-digital converter 104 b as depicted in FIG. 13,performs an operation in which the time measurement end signal isresampled when the count-up signal is inverted.

Specifically, as depicted in the timing chart of FIG. 12, after the timemeasurement end signal has been input at the time TC, the counter memoryfetch signal generation circuit 1101 generates a counter memory fetchsignal at the falling edge (time TE) of the first count-up signal. Thecounter 502 adds 1 to the count value at the rising edge of the count-upsignal.

When the time measurement end signal has been input, the counter memory504 saves the count value by means of the subsequent counter memoryfetch signal. If the time taken for each bit output of the counter 502to stabilize is shorter than a half period of the count-up signal,consequently the count value is always saved in the counter memory 504after each bit output by the counter 502 has completed operating. Thus,it is possible to prevent an erroneous operation caused by operationvariations of each bit of the counter output.

It should be noted that the aforementioned counter memory fetch signalgeneration circuit 1101 does not have to be configured of the inversionelement 1102 and the flip-flop circuit 1103, for example, as long as theoperation of the counter 502 and the timing of the counter memory 504are offset. Instead of the counter memory fetch signal generationcircuit 1101, a circuit may be provided in which the delay elements 602are connected in a plurality of stages and the time measurement endsignal is delayed, for example.

However, in the aforementioned method, the time at which the countermemory 504 acquires a value is later than the time at which the timemeasurement end signal is input, and therefore there exists thecondition that the counter memory 504 acquires a value after 1 has beenadded to the count value for the time at which the time measurement endsignal was input, and there is a risk of an erroneous value beingacquired.

In order to avoid this, in the time-digital converter 104 b in thenonvolatile memory device according to the present embodiment, asampling memory 1302 and a correction circuit 1303 have been added, asdepicted in FIG. 13.

The sampling memory 1302 acquires the value of the least significant bit(output from the first-stage flip-flop 803) of the counter 502 at thesame time as when the time measurement end signal is input. It should benoted that the sampling memory 1302 corresponds to a third memorycircuit in the present disclosure.

Furthermore, the correction circuit 1303 corrects a count value on thebasis of predetermined determination criteria, from the delay memory503, the counter memory 504, and the sampling memory 1302. It should benoted that the predetermined determination criteria, as an example, asdescribed hereinafter, refers to the case where the time measurement endsignal changes from 0 to 1, the output of the counter memory 504 (inother words, the data saved in the counter memory 504) is not 0, theoutput of the delay memory 503 (in other words, the data saved in thedelay memory 503) is a value that is in the latter half of one period(for example, E, F, G, and H depicted in FIG. 6), and the value of theleast significant bit of the counter memory 504 and the value of thesampling memory 1302 are not the same.

The processing procedure therefor is given in the flowchart of FIG. 14.When the time measurement end signal that is input to the time-digitalconverter 104 b changes from 0 to 1 (yes in step S11), after values havebeen acquired by the delay memory 503, the counter memory 504, and thesampling memory 1302, the correction circuit 1303 confirms whether theoutput of the counter memory 504 is not 0 (to be accurate, 0000 in thecase of four bits) (step S12).

If the output of the counter memory 504 is not 0 (no in step S12), thecorrection circuit 1303 refers to the value of the delay memory 503, andconfirms whether it is within the range of the latter half (E, F, G, orH constituting the latter half of the output of one period of A to Hindicated in embodiment 1, provided the delay elements 602 areconstituted by four stages as in FIG. 6) (step S13).

If within the range of the latter half (yes in step S13), the correctioncircuit 1303 compares the value of the least significant bit of thecounter memory 504 and the value of the sampling memory 1302, andconfirms whether the value of the least significant bit of the countermemory 504 and the value of the sampling memory 1302 are different (stepS14).

Here, if the value of the least significant bit of the counter memory504 and the value of the sampling memory 1302 are not the same (no instep S14), and the entirety of the aforementioned condition is met, thecounter memory 504 consequently acquires a value having 1 added to thecount value for the time at which the time measurement end signal isinput. Thus, the correction circuit 1303 performs a correction withwhich 1 is subtracted from the count value of the counter memory 504(step S15). Thereafter, the correction circuit 1303 outputs thecorrected count value to the decoder 505 (step S17).

Furthermore, in the case where the aforementioned condition is not metat all, the correction circuit 1303 takes the count value for the timeat which the time measurement end signal is input, as it is as the countvalue of the counter memory 504 (step S16), and outputs the count valueto the decoder 505 (step S17).

It should be noted that, in the aforementioned counter memory 504, acase has been given in which the value of the least significant bit inthe counter memory 504 is acquired by the sampling memory 1302; however,a bit other than the least significant bit may be acquired by thesampling memory 1302 and used for a determination.

Next, the effect of the correction circuit 1303 will be described byactually using a timing chart. An example of the case where the delayelement ring 501 uses four bits (A to H), the counter 502 uses fourbits, and the sampling memory 1302 uses the least significant one bit ofthe counter 502 is depicted in FIGS. 15 to 18. FIG. 15 is a first timingchart for the case where the correction circuit does not correct thecount value according to the present embodiment. FIG. 16 is a secondtiming chart for the case where the correction circuit does not correctthe count value according to the present embodiment. FIG. 17 is a timingchart for the case where the correction circuit corrects the count valueaccording to the present embodiment. FIG. 18 is a third timing chart forthe case where the correction circuit does not correct the count valueaccording to the present embodiment. Here, more realistic timing chartsare depicted, with a time delay being present in the count-up signal,the counter output, and the counter memory fetch signal.

In the timing chart depicted in FIG. 15, at the timing at which the timemeasurement end signal is input, the delay element ring output=D, thecounter output=09, and the sampling memory output=1. Since the delaymemory output=D, the counter memory output=09 (least significant bit=1),the delay memory 503 is in the first half (A to D), and the samplingmemory output value and the least significant bit of the counter memoryoutput match, the correction circuit 1303 outputs the value of thecounter memory output as it is without subtracting 1 therefrom.

Next, in the timing chart depicted in FIG. 16, at the timing at whichthe time measurement end signal is input, the delay element ringoutput=F, the counter output=09, and the sampling memory output=1. Sincethe delay memory output=F, the counter memory output=09 (leastsignificant bit=1), the delay memory 503 is in the latter half (E to H),and the sampling memory output value and the least significant bit ofthe counter memory output match, the correction circuit 1303 outputs thevalue of the counter memory output as it is without subtracting 1therefrom.

Next, in the timing chart depicted in FIG. 17, at the timing at whichthe time measurement end signal is input, the delay element ringoutput=G, the counter output=09, and the sampling memory output =1.Since the delay memory output=G, the counter memory output=10 (leastsignificant bit=0), the delay memory 503 is in the latter half (E to H),and the sampling memory output and the least significant bit of thecounter memory output are different, the correction circuit 1303 outputsa value obtained by subtracting 1 from the value of the counter memoryoutput.

Next, in the timing chart depicted in FIG. 18, at the timing at whichthe time measurement end signal is input, the delay element ringoutput=A, the counter output=10, and the sampling memory output=1. Thereason the counter output=09 but the counter memory output=10 at thetiming at which the time measurement end signal is input is becausethere is a delay in the counter output compared to the delay elementring output, and originally the correct value is the counter output=10.Since the delay memory output=0, the counter memory output=10 (leastsignificant bit=0), the sampling memory output=1, and the delay memoryis in the first half (A to D), the correction circuit outputs the valueof the counter memory output as it is without subtracting 1 therefrom.

In this way, the correction circuit 1303 subtracts the value of thecounter memory output in an appropriate manner, and a correct time isobtained.

Based on the above, according to the nonvolatile memory device accordingto the present embodiment, the effect of an operation delay of each bitof the counter 502 and an operation delay of the delay element ring 501and counter 502 can be eliminated, and an accurate time measurement canbe performed. It is possible to acquire an accurate resistance value(resistance value information) of the nonvolatile memory 101 from anaccurate time obtained in this manner.

It should be noted that the method for eliminating the effect of theaforementioned operation delay is able to demonstrate said effect in allsystems using the delay element ring 501 and counter 502, regardless ofa variable-resistance nonvolatile memory.

FIG. 25 depicts a time-digital converter 104 e according to a modifiedexample of embodiment 2.

The time-digital converter 104 e includes the delay element ring 501,the counter 502, counter memory fetch signal generation circuits 1101 aand 1101 b, the delay memories 503 a and 503 b, sampling memories 1302 aand 1302 b, the counter memories 504 a and 504 b, correction circuits1303 a and 1303 b, and the decoders 505 a and 505 b. The counter memoryfetch signal generation circuit 1101 a, the delay memory 503 a, thesampling memory 1302 a, the counter memory 504 a, the correction circuit1303 a, and the decoder 505 a constitute a first channel. The countermemory fetch signal generation circuit 1101 b, the delay memory 503 b,the sampling memory 1302 b, the counter memory 504 b, the correctioncircuit 1303 b, and the decoder 505 b constitute a second channel.

The configurations of the counter memory fetch signal generationcircuits 1101 a and 1101 b are the same as that of the aforementionedcounter memory fetch signal generation circuit 1101, for example. Theconfigurations of the delay memories 503 a and 503 b are the same asthat of the aforementioned delay memory 503, for example. Theconfigurations of the sampling memories 1302 a and 1302 b are the sameas that of the aforementioned sampling memory 1302, for example. Theconstituent operations of the counter memories 504 a and 504 b are thesame as that of the aforementioned counter memory 504, for example. Theconfigurations of the correction circuits 1303 a and 1303 b are the sameas that of the aforementioned correction circuit 1303, for example. Theconfigurations of the decoders 505 a and 505 b is the same as that ofthe aforementioned decoder 505, for example.

The operations in the channels of the time-digital converter 104 e arethe same as that described above as the operations of the counter memoryfetch signal generation circuit 1101, the delay memory 503, the samplingmemory 1302, the counter memory 504, the correction circuit 1303, andthe decoder 505, for example.

The first channel outputs information regarding the time from the timemeasurement start time to the first time measurement end time as firstdecoder output on the basis of the time measurement start signal and thefirst time measurement end signal. The second channel outputsinformation regarding the time from the time measurement start time tothe second time measurement end time as second decoder output on thebasis of the time measurement start signal and the second timemeasurement end signal. The time-digital converter 104 e is thereby ableto output a plurality of items of time information in parallel on thebasis of different time measurement end signals. Therefore, for example,a reading device that includes the time-digital converter 104 e and aplurality of resistance-time converters is able to acquire informationregarding the resistance values of a plurality of nonvolatile memoriesin parallel.

It should be noted that the time-digital converter 104 e may be providedwith three or more channels. The time-digital converter 104 e is therebyable to acquire three or more items of time information. It should benoted that, in the time-digital converter 104 e, a decoder does not haveto be provided for each channel, and may be shared by a plurality ofchannels. In this case, for example, the decoder selectively acquiresone set of delay memory output and counter memory output from aplurality of channels, and generates one item of decoder output on thebasis thereof. Thus, a plurality of items of decoder output can beoutput from one decoder.

Embodiment 3

Next, a nonvolatile memory device according to embodiment 3 will bedescribed using FIG. 19. FIG. 19 is a block diagram depicting an exampleof a configuration in which both the time of a time measurement starttime and the time of a time measurement end time of a time-digitalconverter are saved and the difference is output according to thepresent embodiment.

In the nonvolatile memory device according to the aforementionedembodiment, the delay element ring 501 and the counter 502 startoperating from the time measurement start signal being input, the states(saved data) of the delay element ring 501 and the counter 502 when thetime measurement end signal is input are saved in the delay memory 503,the counter memory 504, and the sampling memory 1302, and reference ismade to said states to thereby measure the time from the timemeasurement start to the time measurement end. As a result, there havebeen cases where a phenomenon occurs in which the delay amount changesfor a while after the delay element ring 501 has started operating, andthen stabilizes after a fixed time. Therefore, for an accurate timemeasurement, it is desirable for the time measurement to be started oncethe operation of the delay element ring 501 has stabilized.

Thus, in the nonvolatile memory device according to the presentembodiment, as depicted in FIG. 19, a configuration is adopted in whicha memory that saves the time measurement start time and a memory thatsaves the time measurement end time are provided separately in atime-digital converter 104 c. The stability of the time measurement canthereby be improved.

As depicted in FIG. 19, the time-digital converter 104 c is providedwith, as a configuration for saving the time measurement start time, astart delay memory 1901, a start counter memory 1902, a start countermemory fetch signal generation circuit 1903, a start sampling memory1904, a start correction circuit 1905, and a start decoder 1912.Furthermore, the time-digital converter 104 c is provided with, as aconfiguration for saving the time measurement end time, a stop delaymemory 1906, a stop counter memory 1907, a stop counter memory fetchsignal generation circuit 1908, a stop sampling memory 1909, a stopcorrection circuit 1910, and a stop decoder 1913. In addition, thetime-digital converter 104 c is provided with a difference calculationcircuit 1911 that calculates and outputs the difference between a savedtime measurement start time and time measurement end time.

In the time-digital converter 104 c, when a delay element ring startsignal is input to the delay element ring 501, the delay element ring501 and the counter 502 start operating. After the operation of thedelay element ring 501 has stabilized, the time measurement start signalis input to the time-digital converter 104 c. Thus, the state of thedelay element ring 501 is saved in the start delay memory 1901, and thestate of the counter 502 is saved in the start sampling memory 1904 andthe start counter memory 1902. Then, in a similar manner to thecorrection circuit 1303 indicated in embodiment 2, the counter memoryoutput for when the time measurement start signal was input is correctedby the start correction circuit 1905. In addition, the corrected countermemory output is output to the start decoder 1912 as a start correctioncircuit output.

Thereafter, in the time-digital converter 104 c, when the timemeasurement end signal is input, the state of the delay element ring 501is saved in the stop delay memory 1906, and the state of the counter 502is saved in the stop sampling memory 1909 and the stop counter memory1907. Then, in a similar manner to the correction circuit 1303 indicatedin embodiment 2, the counter memory output for when the time measurementend signal was input is corrected by the stop correction circuit 1910,and the corrected counter memory output is output to the start decoder1912 as a stop correction circuit output.

In addition, the start decoder output is input from the start decoder1912 and the stop decoder output is input from the stop decoder 1913 tothe difference calculation circuit 1911. The difference calculationcircuit 1911 calculates the difference between a correction value forthe time at which the start decoder output, in other words, the timemeasurement start signal was input and a correction value for the timeat which the time measurement end signal was input, and outputs thedifference as a difference calculation output. Thus, it is possible tostart a time measurement after the operation of the delay element ring501 has stabilized, and it is therefore possible to obtain a moreaccurate time. It is possible to acquire an accurate resistance value(resistance value information) of the nonvolatile memory 101 from anaccurate time obtained in this manner.

FIG. 26 depicts a time-digital converter 104 f according to a modifiedexample of embodiment 3.

The time-digital converter 104 f includes the delay element ring 501,the counter 502, the start counter memory fetch signal generationcircuit 1903, the start delay memory 1901, the start sampling memory1904, the start counter memory 1902, the start correction circuit 1905,the start decoder 1912, stop counter memory fetch signal generationcircuits 1908 a and 1908 b, stop delay memories 1906 a and 1906 b, stopsampling memories 1909 a and 1909 b, stop counter memories 1907 a and1907 b, stop correction circuits 1910 a and 1910 b, stop decoders 1913 aand 1913 b, and difference calculation circuits 1911 a and 1911 b. Thestart counter memory fetch signal generation circuit 1903, the startdelay memory 1901, the start sampling memory 1904, the start countermemory 1902, the start correction circuit 1905, and the start decoder1912 constitute a start channel. The stop counter memory fetch signalgeneration circuit 1908 a, the stop delay memory 1906 a, the stopsampling memory 1909 a, the stop counter memory 1907 a, the stopcorrection circuit 1910 a, and the stop decoder 1913 a constitute afirst stop channel. The stop counter memory fetch signal generationcircuit 1908 b, the stop delay memory 1906 b, the stop sampling memory1909 b, the stop counter memory 1907 b, the stop correction circuit 1910b, and the stop decoder 1913 b constitute a second stop channel.

The configurations of the stop counter memory fetch signal generationcircuits 1908 a and 1908 b are the same as that of the aforementionedstop counter memory fetch signal generation circuit 1908, for example.The configurations of the stop delay memories 1906 a and 1906 b are thesame as that of the aforementioned stop delay memory 1906, for example.The configurations of the stop sampling memories 1909 a and 1909 b arethe same as that of the aforementioned stop sampling memory 1909, forexample. The configurations of the stop counter memories 1907 a and 1907b are the same as that of the aforementioned stop counter memory 1907,for example. The configurations of the stop correction circuits 1910 aand 1910 b are the same as that of the aforementioned stop correctioncircuit 1910, for example. The configurations of the stop decoders 1913a and 1913 b are the same as that of the aforementioned stop decoder1913, for example. The configurations of the difference calculationcircuit 1911 a and 1911 b are the same as that of the aforementioneddifference calculation circuit 1911, for example.

The operations in the stop channels of the time-digital converter 104 fare the same as that described above as the operations of the stopcounter memory fetch signal generation circuit 1908, the stop delaymemory 1906, the stop sampling memory 1909, the stop counter memory1907, the stop correction circuit 1910, and the stop decoder 1913, forexample.

The start channel outputs information regarding the time from the starttime of the delay element ring to the time measurement start time asstart decoder output on the basis of a delay element ring start signaland the time measurement start signal. The first stop channel outputsinformation regarding the time from the start time of the delay elementring to the first time measurement end time as first stop decoder outputon the basis of the delay element ring start signal and the first timemeasurement end signal. The difference calculation circuit 1911 aoutputs information regarding the time from the time measurement starttime to the first time measurement end time as first differencecalculation output on the basis of the start decoder output and thefirst stop decoder output. The second stop channel outputs informationregarding the time from the start time of the delay element ring to thesecond time measurement end time as second stop decoder output on thebasis of the delay element ring start signal and the second timemeasurement end signal. The difference calculation circuit 1911 boutputs information regarding the time from the time measurement starttime to the second time measurement end time as second differencecalculation output on the basis of the start decoder output and thesecond stop decoder output. The time-digital converter 104 f is therebyable to output a plurality of items of time information in parallel onthe basis of different time measurement end signals. Therefore, forexample, a reading device that includes the time-digital converter 104 fand a plurality of resistance-time converters is able to acquireinformation regarding the resistance values of a plurality ofnonvolatile memories in parallel.

It should be noted that the time-digital converter 104 f may be providedwith three or more channels. The time-digital converter 104 f is therebyable to acquire three or more items of time information. It should benoted that, in the time-digital converter 104 f, a decoder does not haveto be provided for each channel, and may be shared by a plurality ofchannels. In this case, for example, the decoder selectively acquiresone set of delay memory output and counter memory output from aplurality of channels, and generates one item of decoder output on thebasis thereof. Thus, a plurality of items of decoder output can beoutput from one decoder.

Embodiment 4

Next, a nonvolatile memory device according to embodiment 4 will bedescribed using FIGS. 20 to 23. FIG. 20 is a circuit diagram depictingan example of a configuration in which a current amount of a delayelement ring can be changed according to the present embodiment. FIG. 21is a circuit diagram depicting an example of a configuration in which avoltage amount of a delay element ring can be changed according to thepresent embodiment. FIG. 22 is a block diagram depicting an example of aconfiguration in which the current amount of the delay element ring isadjusted according to the present embodiment. FIG. 23 is a timing chartfor the case where the current amount of the delay element ring isadjusted according to the present embodiment.

It is ideal for the delay elements 602 of the delay element ring 501 toalways have the same delay amount; however, in practice, there are caseswhere the delay time (delay amount) of a signal that is output from thedelay element ring 501 changes due to manufacturing variations andtemperature fluctuations. Thus, as disclosed in FIG. 20, a configurationis adopted in which current sources 2001 are provided on the source sideand the ground side of the delay elements 602 so that the current amountcan be changed. For example, when the current amount flowing to thedelay elements 602 is decreased, the delay amount increases. Byadjusting the current amount that flows to the delay elements 602 bymeans of the current sources 2001, it is possible to obtain a desireddelay amount in the delay element ring 501.

Furthermore, a method in which a voltage is supplied from a voltagesource 2101 to the source side and the ground side of the delay elements602 as in FIG. 21 is also feasible. For example, when the source voltageor the ground voltage of the delay elements 602 is restricted, the delayamount increases. By adjusting the magnitude of the voltage supplied tothe delay elements 602 by means of the voltage source 2101, it ispossible to obtain a desired delay amount in the delay element ring 501.

In addition, the nonvolatile memory device may be provided with anadjustment circuit 2201 that can adjust the current amount or thevoltage amount, instead of the aforementioned current sources 2001 andvoltage source 2101. The adjustment circuit 2201 changes the delay timeof the delay elements 602 in such a way that the time difference fromthe time at which the time measurement start signal is input to the timeat which the time measurement end signal is input becomes apredetermined target value. At such time, the time measurement startsignal and the time measurement end signal may be generated according tothe reference signal that is input from outside. Specifically, this maybe performed as follows.

FIG. 22 depicts a block diagram for the case where the delay amount isto be adjusted. Here, the case where the current amount is to beadjusted will be described. In this case, it is assumed that thetime-digital converter depicted in FIG. 13 is used for the time-digitalconverter 104, and the adjustment circuit 2201 is mounted with theconfiguration capable of adjusting the current amount depicted in FIG.20. Furthermore, FIG. 23 depicts a timing chart for the case where thedelay elements 602 are to be adjusted to have a desired delay amount.

An output value of the decoder 505 that serves as the target value isequal to or greater than 10 and equal to or less than 15, for example.The reference signal is a clock signal having a stable period of acrystal oscillator or the like, and is used in the adjustment circuit2201. The adjustment circuit 2201 outputs a current setting and a timemeasurement start signal at the same time as when the reference signalrises, and inputs a time measurement end signal at the clock signal thatis immediately subsequent to the reference signal or a clock signal thatis a few signals subsequent to the reference signal. Decoder output isthereby obtained from the decoder 505 of the time-digital converter 104b. In the case where the decoder output from the decoder 505 is not thetarget value (equal to or greater than 10 and equal to or less than 15),the adjustment circuit 2201, at the same time as when the referencesignal rises once again, outputs a current setting that is differentfrom the aforementioned and a time measurement start signal, and inputsa time measurement end signal at the clock signal that is immediatelysubsequent to the reference signal or a clock signal that is a fewsignals subsequent to the reference signal. New decoder output isthereby obtained from the decoder 505 of the time-digital converter 104b. The aforementioned is repeated, and the adjustment is finished whenthe decoder output reaches the target value.

If the aforementioned method is used, it is possible to adjust the delayamount of the delay elements 602 of the delay element ring 501, and toobtain a desired delay amount. If the current amount is adjustedimmediately prior to a time being converted into a digital value by thetime-digital converter 104, deviations in delay amounts caused by notonly manufacturing variations of the delay elements 602 but alsotemperature and source voltage fluctuations can also be corrected, and atarget delay amount can be obtained.

Hereinabove, a nonvolatile memory device according to embodiments of thepresent disclosure has been described; however, the present disclosureis not restricted to these embodiments.

For example, the counter circuit may measure the number of times that arising edge occurs or may measure the number of times that a fallingedge occurs in the output of any of a plurality of delay elements.

Furthermore, an AND element may be used instead of a NAND element in thedelay element ring. Furthermore, the delay element ring may beconfigured of only a delay element and a delay flip-flop without using aNAND element. In these cases, a mechanism with which the output of thedelay element is returned to the original state may be newly provided.

Furthermore, the aforementioned counter memory fetch signal generationcircuit does not have to be configured of an inversion element and aflip-flop circuit, and may delay a time measurement end signal withdelay elements being connected in a plurality of stages, for example.

Furthermore, in the aforementioned embodiments, one threshold value fordetermining a resistance value has been given; however, there may be aplurality of threshold values for determining a resistance value. In theaforementioned embodiments, data of 1 or 0 is stored in a nonvolatilememory; however, other data may be stored due to increasing thethreshold values for determining a resistance value.

Furthermore, a nonvolatile memory device has been described in theaforementioned embodiments; however, an integrated circuit card providedwith a nonvolatile memory device having the aforementioned features isalso included in the present disclosure.

Furthermore, the method for eliminating the effect of the aforementionedoperation delays may be used for all systems that use a delay elementring and a counter, regardless of a variable-resistance nonvolatilememory.

Hereinabove, a nonvolatile memory device according to one or moreaspects has been described on the basis of the embodiments; however, thepresent disclosure is not restricted to these embodiments. Modes inwhich various modifications conceived by a person skilled in the arthave been implemented in the present embodiments, and modes constructedby combining the constituent elements in different embodiments may alsobe included within the scope of one or more aspects provided they do notdepart from the purpose of the present disclosure.

Supplement

In FIG. 5, the nonvolatile memory device 100 a is provided with thenonvolatile memory 101, the resistance-time converter 103, and thetime-digital converter 104 a.

The nonvolatile memory 101 stores predetermined information (forexample, 0 or 1) corresponding to a resistance value thereof.

The resistance-time converter 103 outputs a time measurement end signalat a timing corresponding to the resistance value of the nonvolatilememory 101. The resistance-time converter 103 includes the capacitor 201and the comparator 202. The capacitor 201 is able to electricallyconnect to the nonvolatile memory 101. Charge corresponding to theresistance value of the nonvolatile memory 101 is accumulated in thecapacitor 201. Therefore, the potential of the capacitor 201 decreasesat a speed corresponding to the resistance value of the nonvolatilememory 101, due to discharging of the capacitor 201. Alternatively, thepotential of the capacitor 201 increases at a speed corresponding to theresistance value of the nonvolatile memory 101, due to charging of thecapacitor 201. The comparator 202 compares the potential of thecapacitor 201 and a reference potential VREF, and outputs a timemeasurement end signal in accordance with the result thereof. It shouldbe noted that the “capacitor” in the present disclosure is notrestricted to a device and may be parasitic capacitance, for example.

The time measurement start signal and the time measurement end signalare input to the time-digital converter 104 a. The time-digitalconverter 104 a converts the time from the time measurement start signalbeing input to the time measurement end signal being input into adigital value.

The time-digital converter 104 a includes the delay element ring 501,the counter 502, the delay memory 503, the counter memory 504, and thedecoder 505.

As depicted in FIG. 6, the delay element ring 501 includes the pluralityof delay elements 602, and these are connected in a ring form. Each ofthe plurality of delay elements 602 is a digital buffer, for example.The plurality of delay elements 602 output the outputs D0 to D3. In FIG.6, the delay element ring 501 includes the NAND element 601. Inaccordance with the time measurement start signal, the NAND element 601inverts the output D3 from the final-stage delay element 602, andoutputs the inverted value to the first-stage delay element 602. Thus,the outputs D0 to D3, for example, sequentially change each time apredetermined delay period elapses from the time measurement startsignal being input to the first-stage delay element 602. It should benoted that this delay period may vary slightly. The delay element ring501, for example, outputs the output D3 from the final-stage delayelement 602 as a count-up signal. The delay memory 503 stores theoutputs D0 to D3 of the plurality of delay elements 602 on the basis ofthe time measurement end signal.

As depicted in FIG. 8, the counter 502 counts the number of times that arising edge occurs or the number of times that a falling edge occurs inthe count-up signal. The counter memory 504 stores the outputs C0 to C3of the counter 502 on the basis of the time measurement end signal.

The decoder 505 generates decoder output on the basis of the data D0 toD3 and the data C0 to C3. In the present disclosure, “on the basis of X”and “based on X” each mean X is directly or indirectly used.

The time measurement start signal is an example of a “start signal” inthe present disclosure, and the time measurement end signal is anexample of a “first end signal” in the present disclosure. The delayelement ring 501 is an example of a “ring delay circuit” in the presentdisclosure, and the counter 502 is an example of a “counter circuit” inthe present disclosure. The NAND element 601 is an example of an“inversion circuit” in the present disclosure. The delay memory 503 isan example of a “first memory circuit” in the present disclosure, andthe counter memory 504 is an example of a “second memory circuit” in thepresent disclosure. The outputs D0 to D3 of the plurality of delayelements 602 are an example of “first data” in the present disclosure,and the outputs C0 to C3 of the counter 502 are an example of “seconddata” in the present disclosure. The decoder output of the decoder 505is an example of “first digital data” in the present disclosure.

In FIG. 13, the time-digital converter 104 b is additionally providedwith the counter memory fetch signal generation circuit 1101, thesampling memory 1302, and the correction circuit 1303 in addition to theconfiguration of the time-digital converter 104 a.

The counter memory fetch signal generation circuit 1101 causes the dataC0 to C3 of the counter 502 to be acquired by the counter memory 504after a predetermined period has elapsed from the time measurement endsignal being input.

In the example depicted in FIG. 12, at the timing at which the output D3of the final-stage delay element 602 rises, the count-up signal rises,and the counter 502 counts up. Then, after the time measurement endsignal has been input, the counter memory fetch signal rises at thetiming at which the output D3 falls. In this case, the counter memory504 acquires the data C0 to C3 from the counter 502 in accordance withthe counter memory fetch signal.

Alternatively, in a separate example, the time-digital converter 104 bis provided with a delay circuit (not depicted) instead of the countermemory fetch signal generation circuit 1101. This delay circuit causes atime measurement end signal to be delayed by a predetermined delay timeand then output to the counter memory 504. In this case, the countermemory 504 acquires the data C0 to C3 from the counter 502 in accordancewith the delayed time measurement end signal.

The sampling memory 1302 receives a time measurement end signal not viathe counter memory fetch signal generation circuit 1101, and, inaccordance therewith, stores the output CO of the first-stage flip-flop803 of the counter 502.

The correction circuit 1303 generates data of the original count valueor a corrected count value from the output of the delay memory 503, thesampling memory 1302, and the counter 502. The decoder 505 generatesdecoder output from the output of the delay memory 503 and thecorrection circuit 1303.

The counter memory fetch signal generation circuit 1101 and theaforementioned delay circuit are both examples of a “first delaycircuit” in the present disclosure, the sampling memory 1302 is anexample of a “first sampling memory circuit” in the present disclosure,and the correction circuit 1303 is an example of a “first correctioncircuit” in the present disclosure. The counter memory fetch signal isan example of a “fetch signal” in the present disclosure.

In FIG. 19, the time-digital converter 104 c is provided with the delayelement ring 501, the counter 502, the start counter memory fetch signalgeneration circuit 1903, the start delay memory 1901, the start samplingmemory 1904, the start counter memory 1902, the start correction circuit1905, the start decoder 1912, the stop counter memory fetch signalgeneration circuit 1908, the stop delay memory 1906, the stop samplingmemory 1909, the stop counter memory 1907, the stop correction circuit1910, the stop decoder 1913, and the difference calculation circuit1911.

The start counter memory fetch signal generation circuit 1903 is anexample of a “first delay circuit” in the present disclosure, and thestop counter memory fetch signal generation circuit 1908 is an exampleof a “second delay circuit” in the present disclosure. The start delaymemory 1901 is an example of a “first memory circuit” in the presentdisclosure, and the stop delay memory 1906 is an example of a “thirdmemory circuit” in the present disclosure. The start sampling memory1904 is an example of a “first sampling memory circuit” in the presentdisclosure, and the stop sampling memory 1909 is an example of a “secondsampling memory circuit” in the present disclosure. The start countermemory 1902 is an example of a “second memory circuit” in the presentdisclosure, and the stop counter memory 1907 is an example of a “fourthmemory circuit” in the present disclosure. The start correction circuit1905 is an example of a “first correction circuit” in the presentdisclosure, and the stop correction circuit 1910 is an example of a“second correction circuit” in the present disclosure. The start decoder1912 is an example of a “first decoder” in the present disclosure, andthe stop decoder 1913 is an example of a “second decoder” in the presentdisclosure. The difference calculation circuit 1911 is an example of a“first generation circuit” in the present disclosure.

In FIGS. 20 to 22, the current sources 2001, the voltage source 2101, orthe adjustment circuit 2201 are connected to the delay element ring 501.Thus, the delay times of each of the plurality of delay elements 602 canbe adjusted. The current sources 2001, the voltage source 2101, and theadjustment circuit 2201 are all examples of an “adjustment circuit” inthe present disclosure.

In FIG. 22, the adjustment circuit 2201 generates a time measurementstart signal for testing and a time measurement end signal for testingon the basis of a reference signal, and outputs the time measurementstart signal and the time measurement end signal to the time-digitalconverter 104 b. The time-digital converter 104 b outputs the time fromthe time measurement start signal being input to the time measurementend signal being input as decoder output. The adjustment circuit 2201determines whether or not the value of the decoder output is within apredetermined range. If the value of the decoder output is not withinthe predetermined range, the adjustment circuit 2201 adjusts the delaytimes of each of the plurality of delay elements 602.

The time measurement start signal for testing is an example of a “firsttest signal” in the present disclosure, and the time measurement endsignal for testing is an example of a “second test signal” in thepresent disclosure. Decoder output that is output from the time-digitalconverter 104 b to the adjustment circuit 2201 is an example of a“digital value” in the present disclosure.

In FIG. 24, the time-digital converter 104 d includes the delay elementring 501, the counter 502, the delay memories 503 a and 503 b, thecounter memories 504 a and 504 b, and the decoders 505 a and 505 b.

The first time measurement end signal is an example of a “first endsignal” in the present disclosure, and the second time measurement endsignal is an example of a “second end signal” in the present disclosure.The delay memory 503 a is an example of a “first memory circuit” in thepresent disclosure, and the delay memory 503 b is an example of a “thirdmemory circuit” in the present disclosure. The counter memory 504 a isan example of a “second memory circuit” in the present disclosure, andthe counter memory 504 b is an example of a “fourth memory circuit” inthe present disclosure. Data that is output from the delay element ring501 to the delay memory 503 a is an example of “first data” in thepresent disclosure, and data that is output from the counter 502 to thecounter memory 504 a is an example of “second data” in the presentdisclosure. Data that is output from the delay element ring 501 to thedelay memory 503 b is an example of “third data” in the presentdisclosure, and data that is output from the counter 502 to the countermemory 504 b is an example of “fourth data” in the present disclosure.The decoder output of the decoder 505 a is an example of a “firstdigital data” in the present disclosure, and the decoder output of thedecoder 505 b is an example of a “second digital data” in the presentdisclosure.

In FIG. 25, the time-digital converter 104 e is additionally providedwith the counter memory fetch signal generation circuits 1101 a and 1101b, the sampling memories 1302 a and 1302 b, and the correction circuits1303 a and 1303 b in addition to the configuration of the time-digitalconverter 104 d.

The counter memory fetch signal generation circuit 1101 a is an exampleof a “first delay circuit” in the present disclosure, and the countermemory fetch signal generation circuit 1101 b is an example of a “seconddelay circuit” in the present disclosure. The sampling memory 1302 a isan example of a “first sampling memory circuit” in the presentdisclosure, and the sampling memory 1302 b is an example of a “secondsampling memory circuit” in the present disclosure. The correctioncircuit 1303 a is an example of a “first correction circuit” in thepresent disclosure, and the correction circuit 1303 b is an example of a“second correction circuit” in the present disclosure.

In FIG. 26, the time-digital converter 104 f is provided with the delayelement ring 501, the counter 502, the start counter memory fetch signalgeneration circuit 1903, the start delay memory 1901, the start samplingmemory 1904, the start counter memory 1902, the start correction circuit1905, the start decoder 1912, the stop counter memory fetch signalgeneration circuits 1908 a and 1908 b, the stop delay memories 1906 aand 1906 b, the stop sampling memories 1909 a and 1909 b, the stopcounter memories 1907 a and 1907 b, the stop correction circuits 1910 aand 1910 b, the stop decoders 1913 a and 1913 b, and the differencecalculation circuits 1911 a and 1911 b.

The stop delay memory 1906 a is an example of a “third memory circuit”in the present disclosure. The stop delay memory 1906 b is an example ofa “fifth memory circuit” in the present disclosure. The stop samplingmemory 1909 a is an example of a “second sampling memory circuit” in thepresent disclosure, and the stop sampling memory 1909 b is an example ofa “third sampling memory circuit” in the present disclosure. The stopcounter memory 1907 a is an example of a “fourth memory circuit” in thepresent disclosure, and the stop counter memory 1907 b is an example ofa “sixth memory circuit” in the present disclosure. The stop correctioncircuit 1910 a is an example of a “second correction circuit” in thepresent disclosure, and the stop correction circuit 1910 b is an exampleof a “third correction circuit” in the present disclosure. The stopdecoder 1913 a is an example of a “second decoder” in the presentdisclosure, and the stop decoder 1913 b is an example of a “thirddecoder” in the present disclosure. The difference calculation circuit1911 a is an example of a “first generation circuit” in the presentdisclosure, and the difference calculation circuit 1911 b is an exampleof a “second generation circuit” in the present disclosure.

The nonvolatile memory device according to the present disclosure isuseful mounted in an IC, SoC, or the like which implements the accessthat accompanies authentication for data encryption, host computers, andservers.

What is claimed is:
 1. A nonvolatile memory device, comprising: a firstnonvolatile memory that stores information in association with aresistance value of the first nonvolatile memory; a firstresistance-time converter that outputs a first end signal at timingaccording to the resistance value of the first nonvolatile memory, thefirst resistance-time converter being connected to the first nonvolatilememory; and a time-digital converter that measures a first time frominput of a start signal to input of the first end signal and convertsthe measured first time into a first digital value, wherein thetime-digital converter includes: a ring delay circuit that includesdelay elements connected in a ring configuration; a counter circuit thatcounts a number of times of a rising edge or a number of times of afalling edge in output of one of the delay elements; a first memorycircuit that stores, based on the first end signal, outputs of the delayelements as first data; and a second memory circuit that stores, basedon the first end signal, a count value of the counter circuit as seconddata.
 2. The nonvolatile memory device according to claim 1, furthercomprising: a second nonvolatile memory that stores information inassociation with a resistance value of the second nonvolatile memory;and a second resistance-time converter that outputs a second end signalto the time digital converter at timing according to the resistancevalue of the second nonvolatile memory, the second resistance-timeconverter being connected to the second nonvolatile memory, wherein thetime-digital converter further measures a second time from the input ofthe start signal to input of the second end signal and converts themeasured second time into a second digital value, and the time-digitalconverter further includes: a third memory circuit that stores, based onthe second end signal, the outputs of the delay elements as third data;and a fourth memory circuit that stores, based on the second end signal,the count value of the counter circuit as fourth data.
 3. Thenonvolatile memory device according to claim 2, wherein the time-digitalconverter further includes: a first decoder that generates the firstdigital value based on the first data and the second data a seconddecoder that generates the second digital value based on the third dataand the fourth data.
 4. The nonvolatile memory device according to claim1, wherein the time-digital converter further includes a first delaycircuit that causes the second memory circuit to acquire the second datafrom the counter circuit after a predetermined period has elapsed fromthe input of the first end signal.
 5. The nonvolatile memory deviceaccording to claim 4, wherein the first delay circuit delays the firstend signal and outputs the delayed first end signal to the second memorycircuit, and the second memory circuit acquires the second data from thecounter circuit according to the delayed first end signal.
 6. Thenonvolatile memory device according to claim 4, wherein the time-digitalconverter further includes: a first sampling memory circuit that stores,as first sampling data, at least one bit of the count value of thecounter circuit according to the first end signal which is input withoutpassing through the first delay circuit; and a first correction circuitthat generates correction data from the first sampling data, the firstdata, and the second data, and the first digital value is generated fromthe first data and the correction data.
 7. The nonvolatile memory deviceaccording to claim 2, wherein the time-digital converter furtherincludes: a first delay circuit that causes the second memory circuit toacquire the second data from the counter circuit after a predeterminedperiod has elapsed from the input of the first end signal; and a seconddelay circuit that causes the fourth memory circuit to acquire thefourth data from the counter circuit after a predetermined period haselapsed from the input of the second end signal.
 8. The nonvolatilememory device according to claim 7, wherein the first delay circuitdelays the first end signal and outputs the delayed first end signal tothe second memory circuit, the second memory circuit acquires the seconddata from the counter circuit according to the delayed first end signal,the second delay circuit delays the second end signal and outputs thedelayed second end signal to the fourth memory circuit, and the fourthmemory circuit acquires the fourth data from the counter circuitaccording to the delayed second end signal.
 9. The nonvolatile memorydevice according to claim 7, wherein the time-digital converter furtherincludes: a first sampling memory circuit that stores, as first samplingdata, at least one bit of the count value of the counter circuitaccording to the first end signal which is input without passing throughthe first delay circuit; a first correction circuit that generates firstcorrection data from the first sampling data, the first data, and thesecond data; a second sampling memory circuit that stores, as secondsampling data, at least one bit of the count value of the countercircuit according to the second end signal which is input withoutpassing through the second delay circuit; and a second correctioncircuit that generates second correction data from the second samplingdata, the third data, and the fourth data, the first digital value isgenerated from the first data and the first correction data, and thesecond digital value is generated from the third data and the secondcorrection data.
 10. The nonvolatile memory device according to claim 1,wherein the time-digital converter further includes: a third memorycircuit that stores, based on the start signal, the outputs of the delayelements as third data; a fourth memory circuit that stores, based onthe first data and the second data, the count value of the countercircuit as fourth data; a first decoder that generates first decoderoutput based on the first data and the second data; a second decoderthat generates second decoder output based on the third data and thefourth data; and a first generation circuit that generates the firstdigital value from the first decoder output and the second decoderoutput.
 11. The nonvolatile memory device according to claim 10, whereintime-digital converter further includes: a first delay circuit thatcauses the second memory circuit to acquire the second data from thecounter circuit after a predetermined period has elapsed from the inputof the start signal; and a second delay circuit that causes the fourthmemory circuit to acquire the fourth data from the counter circuit aftera predetermined period has elapsed from the input of the first endsignal.
 12. The nonvolatile memory device according to claim 11, whereinthe first delay circuit delays the start signal and outputs the delayedstart signal to the second memory circuit, the second memory circuitacquires the second data from the counter circuit according to thedelayed start signal, the second delay circuit delays the first endsignal and outputs the delayed first end signal to the fourth memorycircuit, and the fourth memory circuit acquires the fourth data from thecounter circuit according to the delayed first end signal.
 13. Thenonvolatile memory device according to claim 11, wherein thetime-digital converter further includes: a first sampling memory circuitthat stores, as first sampling data, at least one bit of the count valueaccording to the start signal which is input without passing through thefirst delay circuit; a first correction circuit that generates firstcorrection data from the first sampling data, the first data, and thesecond data; a first decoder that generates the first decoder outputfrom the first data and the first correction data; a the second samplingmemory circuit that stores, as second sampling data, at least one bit ofthe count value according to the first end signal which is input withoutpassing through the second delay circuit; a second correction circuitthat generates second correction data from the second sampling data, thethird data, and the fourth data; and a second decoder that generates thesecond decoder output from the third data and the second correctiondata.
 14. The nonvolatile memory device according to claim 10, furthercomprising: a second nonvolatile memory that stores information inassociation with a resistance value of the second nonvolatile memory;and a second resistance-time converter that outputs a second end signalto the time digital converter at timing according to the resistancevalue of the second nonvolatile memory, the second resistance-timeconverter being connected to the second nonvolatile memory, wherein thetime-digital converter further measures a second time from the input ofthe start signal to input of the second end signal and converts themeasured second time into a second digital value, and the time-digitalconverter further includes: a fifth memory circuit that stores, based onthe second end signal, the outputs of the delay elements as fifth data;a sixth memory circuit that stores, based on the second end signal, thecount value of the counter circuit as sixth data; a third decoder thatgenerates third decoder output based on the fifth data and the sixthdata; and a second generation circuit that generates the second digitalvalue from the first decoder output and the third decoder output. 15.The nonvolatile memory device according to claim 14, wherein thetime-digital converter further includes: a first delay circuit thatcauses the second memory circuit to acquire the second data from thecounter circuit after a predetermined period has elapsed from the inputof the start signal; a second delay circuit that causes the fourthmemory circuit to acquire the fourth data from the counter circuit aftera predetermined period has elapsed from the input of the first endsignal; and a third delay circuit that causes the sixth memory circuitto acquire the sixth data from the counter circuit after a predeterminedperiod has elapsed from the input of the second end signal.
 16. Thenonvolatile memory device according to claim 15, wherein the first delaycircuit delays the start signal and outputs the delayed start signal tothe second memory circuit, the second memory circuit acquires the seconddata from the counter circuit according to the delayed start signal, thesecond delay circuit delays the first end signal and outputs the delayedfirst end signal to the fourth memory circuit, the fourth memory circuitacquires the fourth data from the counter circuit according to thedelayed first end signal, the third delay circuit delays the second endsignal and outputs the delayed second end signal to the sixth memorycircuit, and the sixth memory circuit acquires the sixth data from thecounter circuit according to the delayed second end signal.
 17. Thenonvolatile memory device according to claim 14, wherein thetime-digital converter further includes: a first sampling memory circuitthat stores, as first sampling data, at least one bit of the count valueaccording to the start signal which is input without passing through thefirst delay circuit; a first correction circuit that generates firstcorrection data from the first sampling data, the first data, and thesecond data; a first decoder that generates the first decoder outputfrom the first data and the first correction data; a second samplingmemory circuit that stores, as second sampling data, at least one bit ofthe count value according to the first end signal which is input withoutpassing through the second delay circuit; a second correction circuitthat generates second correction data from the second sampling data, thethird data, and the fourth data; a second decoder that generates thesecond decoder output from the third data and the second correctiondata; a third sampling memory circuit that stores, as third samplingdata, at least one bit of the count value according to the second endsignal which is input without passing through the third delay circuit; athird correction circuit that generates third correction data from thethird sampling data, the fifth data, and the sixth data; and a thirddecoder that generates the third decoder output from the fifth data andthe third correction data.
 18. The nonvolatile memory device accordingto claim 1, wherein the time-digital converter further includes anadjustment circuit that adjusts delay times of each of the delayelements.
 19. The nonvolatile memory device according to claim 18,wherein the time-digital converter, in an adjustment mode, measures atime from input of a first test signal to input of a second test signaland converts the measured time into a digital value, the first testsignal and the second test signal being generated based on a commonreference signal. determines whether or not the digital value is withina predetermined range, and adjusts the delay times of each of the delayelements if the digital value is determined not to be within thepredetermined range.
 20. An integrated circuit card, comprising thenonvolatile memory device according to claim 1.